TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

By P. Lomenzo, Q. Takmeel, Chuanzhen Zhou, C. Fancher, E. Lambers, N. Rudawski, Jacob L. Jones, S. Moghaddam, Toshikazu Nishida. 2015

182 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/50f00f72a8cc2b6c75c22bcc6fa541938c2499ca