TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
By P. Lomenzo, Q. Takmeel, Chuanzhen Zhou, C. Fancher, E. Lambers, N. Rudawski, Jacob L. Jones, S. Moghaddam, Toshikazu Nishida. 2015
182 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/50f00f72a8cc2b6c75c22bcc6fa541938c2499ca