Interfaces and defects of high-K oxides on silicon

By John Robertson. 2005

227 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/120f3e092eb89958ac5044dd1ca943ea9d17e0ce

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Daniele Ielmini

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Andrea Leonardo Lacaita
3. D. Sharma
4. Simone Lavizzari
5. H. Philip Wong
6. Rainer Waser

Citations in the corpus

• Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “We first note that the decrease of is consistent with the increase of the energy gap [30], which is generally observed after annealing (see”
• Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters (2006, background): “same high-dielectric-constant material, in which they have also considered fixed charges [6], [42], [43].”