Huaxin Lu
Electrical and Electronic Engineering · 2004–2007
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 7 citations into it
Whom Huaxin Lu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Huaxin Lu's perspective
Ordered by how strongly the researchers Huaxin Lu trusts endorse each paper. Same corpus, a different order for every researcher.
- Multiple-gate SOI MOSFETs
- Continuous analytic I-V model for surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
- An analytical solution to a double-gate MOSFET with undoped body
- A continuous, analytic drain-current model for DG MOSFETs
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Beyond the conventional transistor (IBM Journal of Research and Development)
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
Their papers
- A continuous, analytic drain-current model for DG MOSFETs (2004) — 299 citations
- Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (2007) — 148 citations