Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

By Alexander S. Mayorov, R. Gorbachev, S. Morozov, L. Britnell, R. Jalil, L. Ponomarenko, P. Blake, K. Novoselov, Kenji Watanabe, Takashi Taniguchi and 1 more. Nano letters (Print), 2011

1,694 citations recorded by the source corpus.

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/2f7f1412b73b504b3da18f36fa79f953cc7bbd4b

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

In Physical and Theoretical Chemistry

Citations in the corpus

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films (2013, methodology): “We also chose to use hBN as both a substrate and an encapsulating layer to achieve a higher doping homogeneity (7, 29).”
The role of contact resistance in graphene field-effect devices (2017, background): “Moreover, it has been reported that for graphene encapsulated in h-BN the transport is ballistic at room temperature for distances greater than 1μm and the mobility is greater than 10(5) cm(2)Vs [54].”
Graphene Transistors: Status, Prospects, and Problems (2013, background): “graphene the difference is by far not that large and the observed hole mobility may even exceed the electron mobility [22].”