Record RF performance of 45-nm SOI CMOS Technology
By Sungjae Lee, B. Jagannathan, S. Narasimha, A. Chou, N. Zamdmer, Jim Johnson, Richard Q. Williams, L. Wagner, Jonghae Kim, J. Plouchart and 3 more. 2007 IEEE International Electron Devices Meeting, 2007
192 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/0b6cdd7e087cc115ff663aa243f23ee0258d8251
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In Electrical and Electronic Engineering
- Mohamed-Slim Alouini
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- Andrew Waterman
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Citations in the corpus
- Graphene Transistors: Status, Prospects, and Problems (2013, methodology): “The record fT data of the competing FETs are 688 GHz for a 40-nm GaAs mHEMT [91] and 644 GHz for a 30-nm InP HEMT [92], 485 GHz for a 29-nm Si MOSFET [93], 152 GHz for a 100-nm GaAs pHEMT [94], and 153 GHz for a 100-nm carbon nanotube (CNT) MOSFET [95].”
- Terahertz Band: The Last Piece of RF Spectrum Puzzle for Communication Systems (2019, methodology): “In 2007, a transistor cutoff frequency of 485 GHz [54] has been achieved while utilizing a 45-nm microprocessor technology.”
- Single-chip microprocessor that communicates directly using light (2015, background): “A subset of process and performance information regarding this process can be found in various official IBM publications on electronic CMOS process development 18, 29, 30 .”
- $W$ -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS (2012, background): “Y. A. Atesal was with the Electrical and Computer Engineering Department, University of California at San Diego, La Jolla, CA 92093 USA.”