Mobility and Saturation Velocity in Graphene on SiO2
By V. Dorgan, M. Bae, Eric Pop. 2010
505 citations recorded by the source corpus.
We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2235a9d909c76b8c440177b299f9b292105231d8
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- A. Di Bartolomeo
- Filippo Giubileo
- Francesco Bonaccorso
- Andrea C. Ferrari
- Frank Schwierz
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
In Materials Chemistry
- A. Di Bartolomeo
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Filippo Giubileo
- Jonathan N. Coleman
Citations in the corpus
- Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz (2018, background): “The distinct properties of graphene in terms of ultrahigh carrier mobility [19, 20], zero bandgap property that enables wavelengthindependent light absorption over a very wide spectral range [21, 22, 23], and tunable optoelectronic properties [24, 25] give rise to realize the graphene photodetectors”
- Production and processing of graphene and related materials (2020, background): “However, this regime is difficult to reach in SLG because of the requirement of extremely high VSD, which will cause inhomogeneity in n along the channel [1615, 1622].”
- The role of contact resistance in graphene field-effect devices (2017, background): “cm, and appear limited by the substrate [59].”
- Experimental Review of Graphene (2011, background): “The optical phonons of graphene have higher energy (∼160 meV) than those of common semiconductors such as Si (55 meV) [31].”
- Graphene Transistors: Status, Prospects, and Problems (2013, background): “Experiments and theoretical studies consistently revealed saturation velocities of 3–6 10(7) cm/s for gapless largearea graphene [65], [74]–[76], GNRs [76], [77], and bilayer graphene [65], [76].”