Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices

By S. Senkader, C. D. Wright. 2004

223 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/99d3b599c04a145c0391f4634454a7e436ce3d71

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Simone Raoux

In Electrical and Electronic Engineering

1. Simone Raoux
2. A. Padilla
3. Michele M. Franceschini
4. B. Jackson
5. Martin Salinga
6. Bülent N. Kurdi
7. Matthew J. Breitwisch
8. Rohit S. Shenoy

In Materials Chemistry

1. Simone Raoux
2. A. Padilla
3. Michele M. Franceschini
4. B. Jackson
5. Martin Salinga
6. Bülent N. Kurdi
7. Matthew J. Breitwisch
8. Rohit S. Shenoy

Citations in the corpus

• Phase-change random access memory: A scalable technology (2008, background): “explaining the incubation of new crystalline nuclei [28] or”
• Phase change memory technology (2010, background): “Although analytical techniques are attractively simple, and work well for explaining the incubation of new crystalline nuclei[108] or threshold switching[49], it is difficult to include the effects of inhomogeneous temperature distributions and temperaturedependent resistivity, which critically affe”