Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory

By N. Yamada, T. Matsunaga. 2000

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Resonant bonding in crystalline phase-change materials. (2008, background): “Again, the blue curves are for the as-deposited amorphous state and the red curves for the crystalline film with rocksalt structur”
A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators (2019, background): “The 4(a) site is wholly occupied by only Te, and 4(b) site is randomly occupied by Ge, Sb atoms, with some vacancies with different probabilities depending on the composition of the materials [40,41].”
A map for phase-change materials. (2008, background): “All of these alloys crystallize in a metastable rocksalt structure, where Te atoms occupy one lattice site (anion site) and Ge and Sb atoms as well as vacancies occupy the second lattice site (cation site”
Unravelling the interplay of local structure and physical properties in phase-change materials (2006, background): “All of these materials have similar optical and electronic properties and feature similar structures in the amorphous and crystalline stat”
Electronic switching in phase-change memories (2004, background): “Note that the stoichiometric compound Ge Sb Te presents about 20% of structural vacancies [20] in the Ge and Sb sublattice.”
Phase-change materials for rewriteable data storage. (2007, background): “In a material such as Ge 1 Sb 2 Te 4 or Ge 2 Sb 2 Te 5 there are a considerable number of vacancie”