Nanosecond switching in GeTe phase change memory cells

By G. Bruns, P. Merkelbach, C. Schlockermann, Martin Salinga, Matthias Wuttig, T. Happ, J. Philipp, M. Kund. 2009

429 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/46c28b26ead6415a37f27e0031aef94b14f1b1c7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Evangelos Eleftheriou

In Electrical and Electronic Engineering

1. Evangelos Eleftheriou
2. Abu Sebastian
3. Geoffrey W. Burr
4. Chung Hon Lam

In Materials Chemistry

1. Abu Sebastian
2. Geoffrey W. Burr
3. Chung Hon Lam

Citations in the corpus

• Recent Progress in Phase-Change Memory Technology (2016, background): “Set pulses shorter than 10 ns have been demonstrated [4], yet since the crystallization process is many orders of magnitude slower at low temperatures ( ), PCM is a Non-Volatile Memory (NVM) technology that can offer years of data lifetime.”
• Phase change memory technology (2010, neutral): “Phase-change memory devices fabricated from Ge-Te were shown to switch in resistance by nearly 3 orders of magnitude with SET pulses of one nanosecond[36].”