High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

By K. Chang, N. Nuhfer, L. Porter, Q. Wahab. 2000

202 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6a237ef16bb796bd61dd321a1c47668d2474fd5a

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In Electrical and Electronic Engineering

1. Volker Presser
2. K. Nickel
3. Zheng Chen

Citations in the corpus

• Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (2008, background): “of carbon (C) [14], or it may simply be that the topology and”
• Silica on Silicon Carbide (2008, background): “297 , 308 When talking about densities of interface states, it should be borne in mind that most interface states cannot be excited at room temperature (or at least not within several thousands of years 267 ) and therefore care should be taken for measuring their densities at low tempera”