Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

By Mathieu Luisier, A. Schenk, W. Fichtner, Gerhard Klimeck. 2006

390 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/21ec0d93cd287940d263e890aaa7480dac5e0a27

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Dmitri E. Nikonov
2. Mathieu Luisier
3. Mark S. Lundstrom
4. Ian A. Young
5. Gerhard Klimeck
6. Neophytos Neophytou
7. Abhijeet Paul

In Biomedical Engineering

1. Ian A. Young
2. Gerhard Klimeck
3. Dmitri E. Nikonov
4. Mathieu Luisier
5. Neophytos Neophytou
6. Mark S. Lundstrom
7. K. Rumpf
8. P. Granitzer

In Electrical and Electronic Engineering

1. Ian A. Young
2. Gerhard Klimeck
3. Dmitri E. Nikonov
4. Mathieu Luisier
5. Neophytos Neophytou
6. Mark S. Lundstrom
7. Anisur Rahman
8. Jing Guo

Citations in the corpus

• Bandstructure Effects in Silicon Nanowire Electron Transport (2007, background): “This approximation favors computational efficiency without affecting the accuracy of the results [16].”
• Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits (2015, methodology): “CMOS LV is an InAs device [38] of the same geometry simulated [39], [40] with the supply voltage scaled down to 0.”
• Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors (2009, methodology): “We have developed an efficient 3-D atomistic full-band quantum transport simulator [12], [13] that”