Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

By Mathieu Luisier, Gerhard Klimeck. IEEE Electron Device Letters, 2009

151 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d4ef7a2191d3680c91f104f2fef9b69e83767008

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In Biomedical Engineering

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Citations in the corpus

• Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping (2016, background): “In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III–”
• Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “Higher on-currents at lower voltages are obtained in the lower bandgap materials like Ge [45], InAs [ 49 ] and in GNRs [44], [50].”