Hyunsang Hwang
Electrical and Electronic Engineering · 2003–2021
A researcher in the Science corpus: 11 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 135 citations into it; #13,465 of 16,539 by trust here, #4,472 by citations
Whom Hyunsang Hwang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Hyunsang Hwang overall
Papers from Hyunsang Hwang's perspective
Ordered by how strongly the researchers Hyunsang Hwang trusts endorse each paper. Same corpus, a different order for every researcher.
- Back stress strengthening and strain hardening in gradient structure
- Heterogeneous lamella structure unites ultrafine-grain strength with coarse-grain ductility (Proceedings of the National Academy of Sciences of the United States of America)
- Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study
- Ferroelectricity in hafnium oxide thin films
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (IEEE Transactions on Electron Devices)
- Nanoscale memristor device as synapse in neuromorphic systems.
- High resolution in situ mapping of microstrain and microstructure evolution reveals damage resistance criteria in dual phase steels
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
- On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization (International Electron Devices Meeting)
Their papers
- Neuromorphic computing using non-volatile memory (2017) — 1,066 citations
- Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems (2016) — 366 citations
- Access devices for 3D crosspoint memorya) (2014) — 329 citations
- Resistance switching of copper doped MoOx films for nonvolatile memory applications (2007) — 143 citations
- Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications (2010) — 147 citations
- TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application (2011) — 155 citations
- Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021) — 144 citations
- Additional hardening in harmonic structured materials by strain partitioning and back stress (2018) — 266 citations
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications (2011) — 249 citations
- Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures (2007) — 188 citations
- Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) (2003) — 152 citations