Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

By Joonmyoung Lee, E. Bourim, Wootae Lee, Jubong Park, M. Jo, Seungjae Jung, Jungho Shin, Hyunsang Hwang. 2010

147 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/6c1893e9c65a338c90a697458250e7d8f480171c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shimeng Yu
2. H. Philip Wong
3. Ximeng Guan
4. Daniele Ielmini
5. Pai-Yu Chen
6. Razali Ismail
7. Ee Wah Lim
8. Ilia Valov

In Polymers and Plastics

1. Shimeng Yu
2. H. Philip Wong

Citations in the corpus

• On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “Experimentally, uniformity improvement has been demonstrated in the bilayer structure, such as HfOx/AlOx [27], [28] and HfOx/ZrOx [29].”