TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

By Jungho Shin, Insung Kim, K. P. Biju, M. Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park and 1 more. 2011

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f19eaa48821ca0978db383f31f2836f60defd13d

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In Electrical and Electronic Engineering

1. Tuo-Hung Hou
2. Chung-Wei Hsu
3. Jiun-Jia Huang
4. Y. Tseng

Citations in the corpus

• Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications (2011, background): “5 V or nearly 10 Mb, among the largest of all existing projections on the bipolar crossbar array based on experimental results [6]–[8].”