Resistance switching of copper doped MoOx films for nonvolatile memory applications

By Dongsoo Lee, D. Seong, I. Jo, F. Xiang, R. Dong, Seokjoon Oh, Hyunsang Hwang. 2007

143 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/bb921cbe2814df66a9efe3bd465140578d869380

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. J. Joshua Yang
2. R. S. Williams
3. Duncan R. Stewart
4. Matthew D. Pickett
5. Dmitri B. Strukov
6. John Paul Strachan
7. Shahar Kvatinsky
8. Daniele Ielmini

In Electrical and Electronic Engineering

1. J. Joshua Yang
2. R. S. Williams
3. Duncan R. Stewart
4. Matthew D. Pickett
5. J. Campbell Scott
6. Bülent N. Kurdi
7. Rohit S. Shenoy
8. Kailash Gopalakrishnan

In Polymers and Plastics

1. Duncan R. Stewart
2. R. S. Williams

Citations in the corpus

• Overview of candidate device technologies for storage-class memory (2008, background): “scalability and lower program currents still remain to be demonstrated [ 75 ].”
• Memristive switching mechanism for metal/oxide/metal nanodevices. (2008, background): “, or the formation of localized metal-atom chains that bridge the electrode materials under an electric fiel”