Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

By Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Jun-ning Chen, Ming Liu. IEEE Electron Device Letters, 2009

187 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ed4f97585b2d1ff26b145e30badcc35d99a57866

How researchers see this paper

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In Electrical and Electronic Engineering

1. Shimeng Yu
2. H. Philip Wong
3. Ximeng Guan
4. Daniele Ielmini
5. Pai-Yu Chen
6. Razali Ismail
7. Ee Wah Lim
8. Ilia Valov

In Materials Chemistry

1. Ximeng Guan
2. H. Philip Wong
3. Shimeng Yu
4. Jie Deng

Citations in the corpus

• On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, background): “diffusion [21], ion implantation [22], or inserting nanocrystals [23] into the bulk oxide.”
• Nonvolatile resistive switching in graphene oxide thin films (2009, unknown): “, 2010), ZrO2 (Wu et al., 2007; Guan et al., 2008; Liu et al., 2009), and ZnO (Chang et al.”