Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage
By Y. Kitabayashi, T. Kudo, H. Tsuboi, Tetsuya Yamada, Dechen Xu, M. Shibata, D. Matsumura, Y. Hayashi, Mohd Syamsul, M. Inaba and 2 more. IEEE Electron Device Letters, 2017
153 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3e29925fc31c2744e5d0ef2b31325c6edfd34ec4
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Citations in the corpus
- Surface transfer doping of diamond: A review (2021, methodology): “Room temperature off-state breakdown voltages up to 2 kV have been reported for a MISFET device passivated with 200 nm of ALD grown Al2O3 and a Lg of 5 μm, with a Lgd of 24 μm [267].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “device performance, includingVbr of 2 kV [232], [233], Ids,sat of 1.”
- Recent advances in diamond power semiconductor devices (2018, methodology): “[68] Similar to MESFET, Vmax for hydrogen-terminated surface channel FETs can be increased to 2 kV by increasing LGD to 24 μm, which is the highest value for diamond FETs.”