Lain‐Jong Li
Materials Chemistry · 2009–2021
A researcher in the Science corpus: 49 papers; trusts 23 researchers and is trusted by 15 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 876 citations into it; #1,859 of 11,513 by trust here, #89 by citations
- Electrical and Electronic Engineering — 544 citations into it; #15,055 of 16,539 by trust here, #732 by citations
- Biomedical Engineering — 207 citations into it; #6,667 of 10,734 by trust here, #256 by citations
- Mechanical Engineering — 33 citations into it
Whom Lain‐Jong Li trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Lain‐Jong Li overall
Papers from Lain‐Jong Li's perspective
Ordered by how strongly the researchers Lain‐Jong Li trusts endorse each paper. Same corpus, a different order for every researcher.
- The rise of graphene. (Nature Materials)
- Electric Field Effect in Atomically Thin Carbon Films (Science)
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.
- Ultrafast graphene photodetector. (Nature Nanotechnology)
- Graphene-based liquid crystal device. (Nano letters (Print))
- Electromechanical Resonators from Graphene Sheets (Science)
- Et al
- Molybdenum sulfides—efficient and viable materials for electro - and photoelectrocatalytic hydrogen evolution
- Computational high-throughput screening of electrocatalytic materials for hydrogen evolution (Nature Materials)
- Graphene transistors. (Nature Nanotechnology)
Their papers
- Exceptional tunability of band energy in a compressively strained trilayer MoS2 sheet. (2013) — 615 citations
- Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures (2014) — 853 citations
- Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface (2015) — 1,095 citations
- Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition. (2010) — 1,117 citations
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. (2013) — 8,831 citations
- Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition (2012) — 3,226 citations
- Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. (2012) — 1,875 citations
- Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. (2012) — 655 citations
- Integrated circuits based on bilayer MoS₂ transistors. (2012) — 1,652 citations
- Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. (2013) — 639 citations
- van der Waals epitaxy of MoS₂ layers using graphene as growth templates. (2012) — 932 citations
- High-quality thin graphene films from fast electrochemical exfoliation. (2011) — 933 citations
- Highly flexible MoS2 thin-film transistors with ion gel dielectrics. (2012) — 792 citations
- Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments. (2013) — 630 citations
- Monolayer MoS2 heterojunction solar cells. (2014) — 1,142 citations
- Large-area synthesis of highly crystalline WSe(2) monolayers and device applications. (2013) — 1,016 citations
- Effective doping of single-layer graphene from underlying SiO2 substrates (2009) — 179 citations
- Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber (2010) — 258 citations
- Janus monolayers of transition metal dichalcogenides. (2017) — 1,978 citations
- Electrical and Spectroscopic Characterizations of Ultra-Large Reduced Graphene Oxide Monolayers (2009) — 478 citations