Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow
By Z. Zhang, Guo-Quan Lu. 2002
228 citations recorded by the source corpus.
Subfields: Ceramics and Composites, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/959c89ac8087ae88abe407686cbcbb420a0500f8
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In Ceramics and Composites
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices (2007, background): “die-attachment can enhance the densification process such that the sintering temperature can be lowered to about 250 C [6], [7].”
- Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material (2006, unknown): “complicate the process and increase cost [13].”
- Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area $({>}100~{\rm mm}^{2})$ Chips (2010, background): “To lower the sintering temperature of silver pastes below 300 °C, Scheuermann and Schwarzbauer, and more recently others [8]– [10], applied quasi-hydrostatic pressure on the chip/substrate assembly to speed up the sintering kinetics of silver paste at low-temperatures.”