Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping

By S. Ahish, Dheeraj Sharma, Yernad Balachandra Nithin Kumar, M. H. Vasantha. IEEE Transactions on Electron Devices, 2016

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d596d9133e5c4975114c16166e8e65aa2d770148