Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

By K. Shinohara, D. Regan, Yan Tang, A. Corrion, David F. Brown, J. Wong, J. F. Robinson, H. Fung, A. Schmitz, T. Oh and 5 more. IEEE Transactions on Electron Devices, 2013

420 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/6411dd45ed20e8007b23bf5225f37cb6b3b84cf3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Ian F. Akyildiz

In Electrical and Electronic Engineering

1. Ian F. Akyildiz
2. Chong Han
3. Josep Miquel Jornet
4. Shuai Nie
5. Mohamed-Slim Alouini
6. Hadi Sarieddeen
7. Tareq Y.Al-Naffouri
8. Merouane Debbah

In Electronic, Optical and Magnetic Materials

1. Ian F. Akyildiz
2. Josep Miquel Jornet
3. Chong Han
4. Shuai Nie

Citations in the corpus

• Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz (2015, background): “extrinsic capacitance reduction by optimizing gate passivation dielectric [11] and gate metal geometry [12] that minimized”
• Femtosecond-Long Pulse-Based Modulation for Terahertz Band Communication in Nanonetworks (2014, neutral): “For the time being, monolithic integrated circuits based on Silicon [19], Silicon Germanium [20], Indium Phosphide [21] and Gallium Nitride [22], have been demonstrated at frequencies between 0.1 and 1 THz.”
• Terahertz band: Next frontier for wireless communications (2014, positive): “Stateof-the-art GaN-based High-Electron-Mobility Transistors (HEMTs) have been shown with a cut-off frequency fT > 450 GHz, maximum oscillation frequency fmax > 600 GHz, and a breakdown voltage up to VT > 13 V [40].”