Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

By B. Gao, Bing Sun, Haowei Zhang, Lifeng Liu, Xiaoyan Liu, R. Han, Jinfeng Kang, Bin Yu. IEEE Electron Device Letters, 2009

170 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/12c6c023cd4b8c26126d79c23d123b2707e641b9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shimeng Yu
2. H. Philip Wong
3. Ximeng Guan
4. Daniele Ielmini
5. Pai-Yu Chen
6. Razali Ismail
7. Ee Wah Lim
8. Ilia Valov

In Polymers and Plastics

1. Shimeng Yu
2. H. Philip Wong

Citations in the corpus

• On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “In the dielectric region of a HfOx-based RRAM, the current continuity equation is the in the form of [26]”