Resistive Random Access Memory (ReRAM) Based on Metal Oxides

By H. Akinaga, Hisashi Shima. Proceedings of the IEEE, 2010

942 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fd840d5275cac98d64e7778a1b9173b937a77386

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Fabio Stefanini
2. Ning Qiao
3. Saber Moradi
4. Giacomo Indiveri
5. M. Chshiev
6. Larry Bull
7. A. Adamatzky
8. Gerard David Howard

In Materials Chemistry

1. M. Chshiev
2. Giacomo Indiveri
3. Bernard Dieny
4. Fabio Stefanini
5. Saber Moradi
6. Ning Qiao
7. Fu-Chien Chiu

Citations in the corpus

• A Scalable Multicore Architecture With Heterogeneous Memory Structures for Dynamic Neuromorphic Asynchronous Processors (DYNAPs) (2017, methodology): “the emerging memory structures based on nano-scale resistive memories [16], [48], [49].”
• A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, background): “METAL-OXIDE-BASED resistive-switching random access memory (RRAM) has attracted considerable interests as next generation of memory technology due to its excellent memory performance such as simple structure, compatibility with current CMOS technology, and great scalability potential [1]–[4].”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “…connection between these studies and the intense ongoing investigations related to resistive RAM memories which themselves rely on the migration of ions or vacancies in some specific oxide layers or bilayers to provoke resistance changes [for a review, see, for instance, Akinaga and Shima (2010)].”
• A Review on Conduction Mechanisms in Dielectric Films (2014, background): “Recently, the resistance switching behaviors in dielectric films have been extensively studied [26–29].”
• Evolving Spiking Networks with Variable Resistive Memories (2014, background): “Examples of RSMs are confined to binary operation, for example, as resistive random access memory (Akinaga and Shima, 2010; Hosoi et al., 2006), although neural implementations exist (Xia et al.”