Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$
By W. Guan, Shibing Long, Qi Liu, Ming Liu, Wen Wang. IEEE Electron Device Letters, 2008
249 citations recorded by the source corpus.
In this letter, the unique reproducible nonpolar resistive switching behavior is reported in the Cu-doped ZrO2 memory devices. The devices are with the sandwiched structure of Cu/ZrO2:Cu/Pt. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias and can be achieved under both voltage sweeping and voltage pulse. The ratio between the high and low resistance is on the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 and 100 ns, respectively. No data loss is found upon continuous readout for more than 104 s. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is believed to be related with the formation and rupture of conducting filamentary paths.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b526805c7e24f5da7d8929245c4384810bebb398
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In Electrical and Electronic Engineering
Citations in the corpus
- Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, methodology): “Assuming that Cu and Ag have the same shape of filaments, according to Joule law, it can be obtained that the reset time for the rupture of Ag conductive filament is lower than that of Cu filament, and thus a lower Vreset is obtained in Au/ZrO2/Ag device as compared with the Cu/ZrO2:Cu/Pt device [5]”
- Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, methodology): “oxide layer has already been adopted to interpret the resistive switching behavior of RRAM by prior research [4]–[9], but the proposed physical origin is surprisingly diverse, including thermal effect [8], ionic conduction [9], electronic effect [10], metal–insulator transition [11], and ferroelectr”
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, methodology): “This is probably due to the formation of conducting filaments throughout the insulating film [ 7 ].”
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap (2010, background): “Tight distribution of switching parameters is important to realize oxide-based an resistive memory [11], [12].”