Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

By Sreenidhi Turuvekere, Naveen Karumuri, A. Rahman, A. Bhattacharya, A. DasGupta, Nandita DasGupta. IEEE Transactions on Electron Devices, 2013

236 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/d29c092944377fd9c661d25667432fc0a24ff9a2