D. Nirmal

Electrical and Electronic Engineering · 2015–2020

A researcher in the Science corpus: 4 papers; trusts 9 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 151 citations into it
• Condensed Matter Physics — 47 citations into it
• Electronic, Optical and Magnetic Materials — 18 citations into it

Whom D. Nirmal trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. T. Flack
2. R. Pengelly

Papers from D. Nirmal's perspective

Ordered by how strongly the researchers D. Nirmal trusts endorse each paper. Same corpus, a different order for every researcher.

1. GaN Technology for Power Electronic Applications: A Review (Journal of Electronic Materials)
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
3. 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
4. RF power amplifiers for wireless communications (24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu)
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
6. Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
7. Very-high power density AlGaN/GaN HEMTs
8. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications (IEEE transactions on microwave theory and techniques)
9. AND T
10. AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)

Their papers

• A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies (2020) — 142 citations
• A review of GaN HEMT broadband power amplifiers (2020) — 152 citations
• A survey of Gallium Nitride HEMT for RF and high power applications (2017) — 238 citations
• A review of InP/InAlAs/InGaAs based transistors for high frequency applications (2015) — 155 citations