Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

By G. Liang, Neophytos Neophytou, Dmitri E. Nikonov, Mark S. Lundstrom. IEEE Transactions on Electron Devices, 2007

256 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Graphene Terahertz Plasmon Oscillators (2007, background): “The high mobility of electrons in graphene has prompted theoretical and experimental investigations into graphene-based ultrahigh-speed electronic devices such as field-effect transistors, pn-junction diodes, and terahertz devices [4], [5], [7], [10]–[14].”
Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, methodology): “Semiclassical top-of-thebarrier simulations have been performed [16], [17], whereas”
Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects (2009, background): “Since GNRs as narrow as a few nanometers are needed for transistor applications [ 15 ], it is imperative to derive physical models that can accurately describe the conductance of GNRs, even at such small dimensions.”
Simulation of Graphene Nanoribbon Field-Effect Transistors (2007, methodology): “Also from the simulation point of view, research on GNR-FETs is at an embryonic stage: the only works available in the literature [9], [10] are based on a semiclassical anal ytic l top-of-the-barrier model.”
Nonvolatile Switching in Graphene Field-Effect Devices (2008, background): “the use of graphene nanoribbons (GNRs) narrower than 5 nm, which, in theory, will have a band gap larger than 500 meV [11], [12].”