Christoph Jungemann
IEEE Transactions on Electron Devices · 2005
A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Whom Christoph Jungemann trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Peter B. Griffin (in Electrical and Electronic Engineering)
- James D. Plummer (in Electrical and Electronic Engineering)
Papers from Christoph Jungemann's perspective
Ordered by how strongly the researchers Christoph Jungemann trusts endorse each paper. Same corpus, a different order for every researcher.
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (Digest. International Electron Devices Meeting,)
- Activation and diffusion studies of ion-implanted p and n dopants in germanium
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (IEEE Transactions on Electron Devices)
- Materials Fundamentals of Gate Dielectrics
- Nanowire transistors without junctions. (Nature Nanotechnology)
- Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors (IEEE Electron Device Letters)
- Fermi-level pinning and charge neutrality level in germanium
- Ternary Neural Networks with Fine-Grained Quantization
- Improving neural networks by preventing co-adaptation of feature detectors
- Reading Digits in Natural Images with Unsupervised Feature Learning
Their papers
- Impact ionization MOS (I-MOS)-Part II: experimental results (2005) — 149 citations