Impact ionization MOS (I-MOS)-Part I: device and circuit simulations

By Kailash Gopalakrishnan, Peter B. Griffin, James D. Plummer. IEEE Transactions on Electron Devices, 2005

281 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b34b634be0366dc75dbd9d419010645820453aaa

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In Electrical and Electronic Engineering

1. Kailash Gopalakrishnan
2. R. Woo
3. Christoph Jungemann
4. James D. Plummer
5. Peter B. Griffin

Citations in the corpus

• Impact ionization MOS (I-MOS)-Part II: experimental results (2005, background): “3 in [11]) showed that a considerable fraction of the electrons have a vertical component to their momentum due to the nature of the breakdown”
• The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (2008, unknown): “carriers instead of diffusion ([7], [8]).”