Fermi-level pinning and charge neutrality level in germanium

By A. Dimoulas, P. Tsipas, A. Sotiropoulos, E. Evangelou. 2006

574 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ae5e7412551dc617fcdca890ce07cf7e4d790a66

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Krishna C. Saraswat

In Electrical and Electronic Engineering

1. Krishna C. Saraswat
2. Duygu Kuzum
3. Shimeng Yu
4. Mamidala Jagadesh Kumar
5. John Robertson

Citations in the corpus

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates (2008, result): “These findings are consistent with a low-lying charge neutrality level [22].”