Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

By Sung-Jin Choi, Dong-il Moon, Sungho Kim, Juan Pablo Duarte, Yang-Kyu Choi. IEEE Electron Device Letters, 2011

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Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs (2012, background): “Previous investigations have suggested that JL-FETs are inherently more sensitive to fluctuations in baseline channel doping levels than equivalent inversion-mode field-effect transistors (FETs) [2], [5].”
Modeling and Simulation Investigation of Sensitivity of Symmetric Split Gate Junctionless FET for Biosensing Application (2017, background): “Junctionless MOSFET is a heavily doped silicon film and it has same type of doping in source, channel and drain regions [21], [22].”
Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, result): “In [9], the Vth fluctuation of JLT caused by thickness variation is significantly larger than the equivalent inversion-mode (IM) FETs.”
Effect of Band-to-Band Tunneling on Junctionless Transistors (2012, methodology): “New JLT designs include nanowire gate-all-around (GAA) architectures [4], [8], trigated nanowire architectures with a silicon-on-insulator (SOI) [1], and bulk substrates [5].”
Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors (2011, result): “In the case of a doping concentration of 5 × 10(19) cm−3, an oxide thickness of 2 nm, and a channel thickness of 6 nm, the variability derived from (6) is approximately 347 mV/nm, constituting only a 4% difference compared with the variability found previously for the same case in [12].”