James D. Plummer
Electrical and Electronic Engineering · 2002–2005
A researcher in the Science corpus: 6 papers; trusts 1 researcher and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 5 citations into it; #7,417 of 16,539 by trust here, #8,322 by citations
Whom James D. Plummer trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts James D. Plummer overall
Papers from James D. Plummer's perspective
Ordered by how strongly the researchers James D. Plummer trusts endorse each paper. Same corpus, a different order for every researcher.
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (Digest. International Electron Devices Meeting,)
- Activation and diffusion studies of ion-implanted p and n dopants in germanium
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (IEEE Transactions on Electron Devices)
- Materials Fundamentals of Gate Dielectrics
- Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
- Low-Density Parity-Check Codes
- NeuFlow: A runtime reconfigurable dataflow processor for vision
- Deep Residual Learning for Image Recognition (Computer Vision and Pattern Recognition)
- DaDianNao: A Machine-Learning Supercomputer
- Deep Compression: Compressing Deep Neural Network with Pruning, Trained Quantization and Huffman Coding
Their papers
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (2002) — 370 citations
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (2005) — 281 citations
- Activation and diffusion studies of ion-implanted p and n dopants in germanium (2003) — 259 citations
- Impact ionization MOS (I-MOS)-Part II: experimental results (2005) — 149 citations
- High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates (2004) — 201 citations
- Physical processes associated with the deactivation of dopants in laser annealed silicon (2002) — 133 citations