Peter B. Griffin
Electrical and Electronic Engineering · 2002–2007
A researcher in the Science corpus: 6 papers; trusts 1 researcher and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 7 citations into it; #7,416 of 16,539 by trust here, #6,854 by citations
Whom Peter B. Griffin trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Peter B. Griffin overall
Papers from Peter B. Griffin's perspective
Ordered by how strongly the researchers Peter B. Griffin trusts endorse each paper. Same corpus, a different order for every researcher.
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (Digest. International Electron Devices Meeting,)
- Activation and diffusion studies of ion-implanted p and n dopants in germanium
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (IEEE Transactions on Electron Devices)
- Materials Fundamentals of Gate Dielectrics
- Low-Density Parity-Check Codes
- NeuFlow: A runtime reconfigurable dataflow processor for vision
- Deep Residual Learning for Image Recognition (Computer Vision and Pattern Recognition)
- DaDianNao: A Machine-Learning Supercomputer
- Deep Compression: Compressing Deep Neural Network with Pruning, Trained Quantization and Huffman Coding
- Caffe: Convolutional Architecture for Fast Feature Embedding
Their papers
- Bipolar resistive switching in polycrystalline TiO2 films (2007) — 207 citations
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (2002) — 370 citations
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (2005) — 281 citations
- Activation and diffusion studies of ion-implanted p and n dopants in germanium (2003) — 259 citations
- Impact ionization MOS (I-MOS)-Part II: experimental results (2005) — 149 citations
- Physical processes associated with the deactivation of dopants in laser annealed silicon (2002) — 133 citations