Ronán Brady

IEEE transactions on microwave theory and techniques · 2008

A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Papers from Ronán Brady's perspective

Ordered by how strongly the researchers Ronán Brady trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A new small-signal modeling approach applied to GaN devices (IEEE transactions on microwave theory and techniques)
  2. AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
  3. Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (IEEE Transactions on Electron Devices)
  4. Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs (IEEE transactions on microwave theory and techniques)
  5. Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design (IEEE transactions on microwave theory and techniques)
  6. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
  7. Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
  8. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
  9. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
  10. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

Their papers