Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design

By Pedro M. Cabral, José Carlos Pedro, Nuno Miguel Gonçalves Borges de Carvalho. IEEE transactions on microwave theory and techniques, 2004

157 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/27f2183811856311020ba1158342967e3ccb1bd4

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In Condensed Matter Physics

1. L. Larson

In Electrical and Electronic Engineering

1. Peter M. Asbeck
2. L. Larson

Citations in the corpus

• Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs (2006, methodology): “Many procedures based on “cold” -parameter measurements have been proposed to resolve this problem [4], [5], [11]‐[ 23 ].”
• High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs (2006, methodology): “For accurate simulation of the power amplifier, a nonlinear equivalent-circuit model for the GaN HFET was developed using the empirical large-signal model published in [12].”