Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

By G. Crupi, D. Xiao, D. Schreurs, E. Limiti, A. Caddemi, W. Raedt, M. Germain. IEEE transactions on microwave theory and techniques, 2006

179 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8c13b444d238eeb8bb12ec7e4e645319f233b619

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Thomas J. Brazil
2. Chris Oxley
3. Ronán Brady

In Electrical and Electronic Engineering

1. Thomas J. Brazil
2. Chris Oxley
3. Ronán Brady
4. Anding Zhu

Citations in the corpus

• An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices (2008, methodology): “The following outlines the novel procedure for the correct extraction of the entire set of circuit elements.”