A new small-signal modeling approach applied to GaN devices

By Anwar Jarndal, G. Kompa. IEEE transactions on microwave theory and techniques, 2005

292 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bc0331ab2168a5933b3dd2df715a186faeebd791

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Thomas J. Brazil
2. Chris Oxley
3. Ronán Brady

In Electrical and Electronic Engineering

1. Thomas J. Brazil
2. Chris Oxley
3. Ronán Brady
4. Anding Zhu

Citations in the corpus

• An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices (2008, methodology): “A 22-element distributed model proposed in [11] requires the estimation of initial element values for a bi-directional optimization technique.”
• Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs (2006, methodology): “Already it was experimentally observed that it is necessary to use a strong " forward " condition for a " cold " GaN HEMT in order to obtain a pure inductive behavior of since the AlGaN/GaN heterostructure has a conduction band discontinuity much larger in comparison to the traditional GaAs HEMT [6]”