Shengqi Yang

Electrical and Electronic Engineering · with Bhardwaj · 2010–2012

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Shengqi Yang trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Wei Zhao

Papers from Shengqi Yang's perspective

Ordered by how strongly the researchers Shengqi Yang trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  2. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
  3. Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (IEEE Transactions on Electron Devices)
  4. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  5. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress (IEEE Transactions on Electron Devices)
  6. Impact of NBTI on the temporal performance degradation of digital circuits (IEEE Electron Device Letters)
  7. Modeling and minimization of PMOS NBTI effect for robust nanometer design (2006 43rd ACM/IEEE Design Automation Conference)
  8. Predictive Modeling of the NBTI Effect for Reliable Design (IEEE Custom Integrated Circuits Conference)
  9. New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration (IEEE Transactions on Electron Devices)
  10. Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology (IEEE transactions on device and materials reliability)

Their papers