R. Woo

IEEE Transactions on Electron Devices · 2005

A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Whom R. Woo trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Peter B. Griffin

Papers from R. Woo's perspective

Ordered by how strongly the researchers R. Woo trusts endorse each paper. Same corpus, a different order for every researcher.

  1. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (Digest. International Electron Devices Meeting,)
  2. Activation and diffusion studies of ion-implanted p and n dopants in germanium
  3. Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (IEEE Transactions on Electron Devices)
  4. Materials Fundamentals of Gate Dielectrics
  5. Nanowire transistors without junctions. (Nature Nanotechnology)
  6. Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors (IEEE Electron Device Letters)
  7. Fermi-level pinning and charge neutrality level in germanium
  8. Ternary Neural Networks with Fine-Grained Quantization
  9. Improving neural networks by preventing co-adaptation of feature detectors
  10. Reading Digits in Natural Images with Unsupervised Feature Learning

Their papers