Bipolar resistive switching in polycrystalline TiO2 films

By K. Tsunoda, Y. Fukuzumi, John R. Jameson, Zheng Wang, Peter B. Griffin, Y. Nishi. 2007

207 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Cognitive Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c2272da1f2e390ff3eeb92fd6df61dd178e24279

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. H. Philip Wong
2. Shimeng Yu
3. J. Joshua Yang
4. R. S. Williams
5. Duncan R. Stewart
6. Matthew D. Pickett
7. Daniele Ielmini
8. Dmitri B. Strukov

In Cognitive Neuroscience

1. Shimeng Yu
2. H. Philip Wong
3. R. S. Williams

In Electrical and Electronic Engineering

1. Shimeng Yu
2. H. Philip Wong
3. J. Joshua Yang
4. Daniele Ielmini
5. R. S. Williams
6. Duncan R. Stewart
7. Matthew D. Pickett
8. Shibing Long

Citations in the corpus

• Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, background): “A universal inversely proportional relationship exists between the cell resistance and the set compliance current [1], [2], [14], [24], [33], [34].”
• Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, background): “4(a), is very similar to the switching characteristics of the memory devices based on solid electrolyte [8]–[10], where the formation and”
• Electrochemical metallization memories—fundamentals, applications, prospects (2011, unknown): “Gex Sy W: [9, 87, 14, 49, 88, 48, 44, 95, 16] W: [87] Gex Sey W: [9, 49, 72, 50, 15, 43] W: [87] Pt: [51] Ni: [49, 45, 94, 96] Ge–Te TiW: [90] TaN: [38] GST Mo: [91] As–S Au: [89] Znx Cd1−x S Pt: [39, 93] Cu2S Pt: [36, 46, 35] Ti: [41]a, [58]b Ta2O5 Pt: [85, 36, 60] Ru: [86] SiO2 Co: [84] W: [52, 92”
• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[37] Tsunoda K, Fukuzumi Y, Jameson JR, Wang Z, Griffin PB, Nishi Y.”
• Memristive switching mechanism for metal/oxide/metal nanodevices. (2008, background): “, or the formation of localized metal-atom chains that bridge the electrode materials under an electric fiel”
• Nonvolatile resistive switching in graphene oxide thin films (2009, background): “It has been reported that solid electrolyte memory devices based on silver ions generally show low switching voltages (Kund et al., 2005; Schindler et al., 2007; Tsunoda et al., 2007).”
• Cation-based resistance change memory (2013, unknown): “Other insulators used in ReRAM cells, e.g., ZrO2 [49, 56] or TiO2 [43, 57] are able to conduct both cations and anions.”