282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

By Penghui Dong, Jianchang Yan, Junxi Wang, Yun Zhang, C. Geng, T. Wei, P. Cong, Yiyun Zhang, J. Zeng, Yingdong Tian and 5 more. 2013

197 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e6fffc5e0c906c405ba06e31466a0ce21780cff6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Akira Hirano
2. M. Kneissl
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz

In Condensed Matter Physics

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Hideki Hirayama
5. Ferdinand Scholz
6. J. Rass

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. Akira Hirano
3. Matteo Meneghini
4. Ferdinand Scholz

Citations in the corpus

• The 2020 UV emitter roadmap (2020, background): “Laterally growing from these or other nanopatterned templates, such as sapphire or silicon, alongside the use of maskless techniques, permits the use of traditional epitaxial lateral overgrowth defect reduction techniques whilst coping with the poor mobility of Al species in the growth environment t”