Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
By P. Lagger, C. Ostermaier, G. Pobegen, Dionyz Pogany. International Electron Devices Meeting, 2012
138 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/677f2eabcb3a4931710948738085097496387079
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, background): “7 V between the up and down sweep of the gate bias from −1 to 8 V, which is most likely caused by acceptor-like states in the Al2O3 dielectric layer or at the Al2O3/GaN interface [15], [16].”
- Reliability and parasitic issues in GaN-based power HEMTs: a review (2016, background): “Typically, these trapping/detrapping processes have very slow kinetics (see [19]), and a broad distribution of time constants.”
- GaN-on-Si Power Technology: Devices and Applications (2017, background): “The dynamic charging/discharging processes of these traps could lead to VTH instability [17], [23], [25].”