R. Falster

Electrical and Electronic Engineering · 2000–2014

A researcher in the Science corpus: 4 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 12 citations into it
• Atomic and Molecular Physics, and Optics — 7 citations into it

Whom R. Falster trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. K. Bothe

Papers from R. Falster's perspective

Ordered by how strongly the researchers R. Falster trusts endorse each paper. Same corpus, a different order for every researcher.

1. Electronically activated boron-oxygen-related recombination centers in crystalline silicon
2. General parameterization of Auger recombination in crystalline silicon
3. Overview on SiN surface passivation of crystalline silicon solar cells
4. Mechanisms of transition-metal gettering in silicon
5. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
6. Large Deviations Estimates for Some Non-local Equations I. Fast Decaying Kernels and Explicit Bounds
7. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
8. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
9. Oxygen diffusion and precipitation in Czochralski silicon
10. Very low bulk and surface recombination in oxidized silicon wafers

Their papers

• Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells (2010) — 141 citations
• Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation (2014) — 231 citations
• Intrinsic point defects and impurities in silicon crystal growth (2002) — 146 citations
• On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing (2000) — 193 citations