Very low bulk and surface recombination in oxidized silicon wafers

270 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 (2008, background): “an additional annealing treatment at 4008C (the so-called ‘alneal’)—SRVs below 20 cm/s on unmetallized low-resistivity ( 1V cm) p-type c-Si wafers.(4) In addition, the SiO2/Al stack at the cell rear acts as an excellent reflector for near-bandgap photons, significantly improving the light trapping p”
Improved parameterization of Auger recombination in silicon (2012, methodology): “Maximum effective lifetime as function of the dopant concentration measured at 300 K on p-type silicon, together with literature data [31-34].”
Toward the Practical Limits of Silicon Solar Cells (2014, background): “The literature reports several data points with a bulk lifetime in the range of 30 ms for lightly doped n- and p-type silicon [9], [10], which suggests that it may be possible to exceed the currently observed 17 ms.”
Measuring and interpreting the lifetime of silicon wafers (2004, background): “In addition, Auger and band-to-band recombination also come into effect (Kerr and Cuevas, 2002c).”
Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “The classic alneal process, which involves evaporating a thin Al layer on top of the SiO2 and annealing in a forming gas ambient, was developed to improve the passivation quality of SiO2 on silicon surfaces [29].”