Rakesh Gnana David Jeyasingh
Electrical and Electronic Engineering · 2011–2012
A researcher in the Science corpus: 2 papers; trusts 3 researchers and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 24 citations into it; #6,323 of 16,539 by trust here, #3,735 by citations
- Cellular and Molecular Neuroscience — 15 citations into it; #1,294 of 2,998 by trust here, #487 by citations
- Cognitive Neuroscience — 11 citations into it
- Neuroscience — 7 citations into it
Whom Rakesh Gnana David Jeyasingh trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Rakesh Gnana David Jeyasingh overall
- Shimeng Yu
- H. Philip Wong
- Daniele Ielmini
- Pai-Yu Chen
- Duygu Kuzum
- Giacomo Indiveri
- Emre O. Neftci
- Shankar Ganesh Ramasubramanian
Papers from Rakesh Gnana David Jeyasingh's perspective
Ordered by how strongly the researchers Rakesh Gnana David Jeyasingh trusts endorse each paper. Same corpus, a different order for every researcher.
- A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity (IEEE Transactions on Neural Networks)
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
- Spike-timing-dependent learning in memristive nanodevices (2008 IEEE International Symposium on Nanoscale Architectures)
- Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance (International Electron Devices Meeting)
- The cat is out of the bag: cortical simulations with 109 neurons, 1013 synapses (Proceedings of the Conference on High Performance Computing Networking, Storage and Analysis)
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (Nature Nanotechnology)
- An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse
- Mechanism for bipolar resistive switching in transition-metal oxides
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (IEEE Electron Device Letters)
- Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory