Mechanism for bipolar resistive switching in transition-metal oxides

By Marcelo J. Rozenberg, M. J. Sánchez, R. Weht, C. Acha, F. Gomez-Marlasca, P. Levy. 2010

178 citations recorded by the source corpus.

We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a8ceedfd558067a904bb5db53c5f35e3e49ea986

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In Cellular and Molecular Neuroscience

In Electrical and Electronic Engineering

Citations in the corpus

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation (2011, background): “It is speculated that a higher set pulse amplitude would impose more stress on the oxide materials to create more defects, e.g., oxygen vacancies, and more defects would lead to a lower resistance because the defect density would determine the local conductivity of the CFs [ 34 ].”
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, background): “In [8], the local resistivity of the CF is characterized by a certain concentration of oxygen vacancies, and the resistivity is assumed to be proportional to the oxygen vacancy concentration as a first-order approximation.”