Yang Du

IEEE Transactions on Electron Devices · with Fossum · 2005

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Yang Du trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Jerry G. Fossum (in Electrical and Electronic Engineering)

Papers from Yang Du's perspective

Ordered by how strongly the researchers Yang Du trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
  2. The Design of CMOS Radio-Frequency Integrated Circuits
  3. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
  4. A spacer patterning technology for nanoscale CMOS
  5. Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation (Digest. International Electron Devices Meeting,)
  6. A logic nanotechnology featuring strained-silicon (IEEE Electron Device Letters)
  7. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  8. Extension and source/drain design for high-performance FinFET devices
  9. FinFET scaling to 10 nm gate length (Digest. International Electron Devices Meeting,)

Their papers