B. Jackson

Electrical and Electronic Engineering · with Breitwisch · 2010

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom B. Jackson trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Stefan K. Lai (in Electrical and Electronic Engineering)

Papers from B. Jackson's perspective

Ordered by how strongly the researchers B. Jackson trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
  2. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
  3. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
  4. Storage-class memory: The next storage system technology (IBM Journal of Research and Development)
  5. Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)
  6. Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology (International Electron Devices Meeting)
  7. Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
  8. Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
  9. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
  10. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Their papers