HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

By A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, Michel Houssa, M. Caymax. 2005

152 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ebe83c851f138e2bdea67119f76dd36e36983da9